STUDIES OF GAAS-SURFACES BY SCANNING TUNNELING INDUCED PHOTON-EMISSION

被引：12

作者：

HORN, J ^{[1
]}

RICHTER, R ^{[1
]}

HARTNAGEL, HL ^{[1
]}

SPROSSLER, CA ^{[1
]}

BISCHOFF, M ^{[1
]}

PAGNIA, H ^{[1
]}

机构：

[1] TH DARMSTADT,INST ANGEW PHYS,W-6100 DARMSTADT,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 20卷 / 1-2期

关键词：

D O I：

10.1016/0921-5107(93)90424-L

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A scanning tunnelling microscope (STM) is used in order to induce photon emission out of technology relevant p and n doped GaAs (100) surfaces. By detecting the emitted light with a photon counting system, the photon map is recorded additionally to the usual topographic image. This technique is used to investigate the influence of surface damage on the emission intensity with nanometer resolution. We could show that the intensity of photon emission depends on the doping type and concentration and also on the surface quality. Surface areas with mechanically induced crystal defects show a drastically reduced luminescence intensity.

引用

页码：183 / 185

页数：3

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