ESTIMATION OF DAMAGE-INDUCED BY FOCUSED GA ION-BEAM IRRADIATION

被引：14

作者：

YAMAMOTO, T

YANAGISAWA, J

GAMO, K

TAKAOKA, S

MURASE, K

机构：

[1] OSAKA UNIV,FAC SCI,DEPT PHYS,TOYONAKA,OSAKA 560,JAPAN

[2] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 12B期

关键词：

FOCUSED ION BEAM (FIB); EXPONENTIAL BEAM TAIL; ELECTRON FOCUSING EFFECT; ION-BEAM-INDUCED DAMAGE; BALLISTIC LENGTH;

D O I：

10.1143/JJAP.32.6268

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the ballistic length l(bFIB) of a GaAs/AlGaAs sample using the electron focusing effect and the mean free path l(eFIB) of the narrow channel, both formed by focused ion beam (FIB) irradiation, to estimate the damage induced by FIB irradiation. It is observed that scattering centers are induced by FIB irradiation, which exhibit dependence on the electron density, unlike scattering centers due to grown-in defects. The FIB-induced scattering centers distribute far beyond the distance of the FIB spot size. This may be due to the exponential tail distribution of FIB.

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页码：6268 / 6273

页数：6

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