HIGH CRITICAL CURRENTS IN EPITAXIAL YBA2CU3O7-X THIN-FILMS ON SILICON WITH BUFFER LAYERS

被引：94

作者：

WU, XD

INAM, A

HEGDE, MS

WILKENS, B

CHANG, CC

HWANG, DM

NAZAR, L

VENKATESAN, T

MIURA, S

MATSUBARA, S

MIYASAKA, Y

SHOHATA, N

机构：

[1] BELLCORE,RED BANK,NJ 07701

[2] NEC CORP,KAWASAKI,KANAGAWA 213,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 08期

关键词：

D O I：

10.1063/1.101471

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：754 / 756

页数：3

共 16 条

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[4]

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APPLIED PHYSICS LETTERS, 1988, 53 (20) :1967-1969

[8] THIN-FILMS OF Y-BA-CU-O ON SILICON AND SILICON DIOXIDE [J].

MOGROCAMPERO, A ;

TURNER, LG .

APPLIED PHYSICS LETTERS, 1988, 52 (14) :1185-1186

[9] CHARACTERIZATION OF THIN-FILMS OF Y-BA-CU-O ON OXIDIZED SILICON WITH A ZIRCONIA BUFFER LAYER [J].

MOGROCAMPERO, A ;

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BURRELL, MC .

APPLIED PHYSICS LETTERS, 1988, 52 (24) :2068-2070

[10]

SHOHATA N, 1986, 6TH P IEEE INT S APP, P580

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