SPECTROSCOPIC STUDIES OF REAL SPACE INDIRECT SYMMETRIC GAAS/ALAS SHORT-PERIOD SUPERLATTICES

被引:15
作者
CINGOLANI, R [1 ]
PLOOG, K [1 ]
BALDASSARRE, L [1 ]
FERRARA, M [1 ]
LUGARA, M [1 ]
MORO, C [1 ]
机构
[1] UNIV BARI,DIPARTIMENTO FIS,I-70125 BARI,ITALY
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 50卷 / 02期
关键词
78.55.-m; 78.65.-b;
D O I
10.1007/BF00343417
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The band structure and the optical transitions of symmetric ultra-short period (GaAs)m/(AlAs)n superlattices (n=m is the number of monolayers) have been studied using different spectroscopic techniques, namely photoacoustic spectroscopy, reflectivity and luminescence, photoluminescence excitation and high excitation intensity time-resolved luminescence. Direct observation of the transition from type I to type II energy band alignment is reported for superlattices whose configuration consists of more than 12 monolayers (i.e. m=n>12). The radiative recombination processes associated with the real space indirect transitions have been investigated as a function of the density of photogenerated electron-hole pairs, revealing an unusual density-dependent behaviour. A tentative interpretation in terms of a condensed electron-hole state at the indirect gap is given, which accounts for the long decay time of the type II luminescence at high excitation rate. © 1990 Springer-Verlag.
引用
收藏
页码:189 / 196
页数:8
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