MONTE-CARLO SIMULATION OF ELECTRON-HOLE THERMALIZATION IN PHOTOEXCITED BULK SEMICONDUCTORS

被引：36

作者：

JOSHI, RP ^{[1
]}

GRONDIN, RO ^{[1
]}

FERRY, DK ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,CTR SOLID STATE ELECTR RES,TEMPE,AZ 85287

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.42.5685

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use an ensemble Monte Carlo technique to model the thermalization of electron-hole plasmas following a laser excitation. For concreteness, we concentrate on the results of two recent experiments. Our calculations quantitatively confirm the existence of separate effective electron and hole temperatures during the first 10 ps in AlxGa1-xAs. The carrier cooling can be explained by invoking both nonequilibrium phonons and carrier degeneracy. Comparison with a band-edge luminescence experiment brings out features concerning the electron-hole and intervalley scattering contributions. © 1990 The American Physical Society.

引用

页码：5685 / 5692

页数：8

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