INVESTIGATION OF THE PROCESS LATITUDE FOR SUB-HALF-MICRON PATTERN REPLICATION IN X-RAY-LITHOGRAPHY

被引：8

作者：

OERTEL, HK

WEISS, M

HUBER, HL

机构：

[1] Fraunhofer Institut für Mikrostrukturtechnik (IMT), D-1000 Berlin 33

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90107-O

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this contribution the influence of the resist development on the process latitude of X-ray lithography is investigated and it is found that the consideration of resist contrast and dark erosion rate tends to increase the process window considerably For long (2-dimensional) features this method gains a comfortable process window for features dimensions down to 150 nm.

引用

页码：339 / 342

页数：4

共 8 条

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[2]

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[3]

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[4]

Guo, Chen, White, Anderson, Cerrina, Proceedings of the 34 th International Symposium on Electron, Ion, and Photon Beams, J. Vac. Sci. Technol., (1990)

[5]

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[6]

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[7]

Weibeta, Oertel, Huber, Microelectronic Engineering, 6, (1987)

[8]

Oertel, Et al., SPIE, 1089, (1989)

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