A SELF-ISOLATED AND EFFICIENT POWER DEVICE FOR HVICS - RESURF LDMOS WITH SIPOS LAYERS

被引：7

作者：

CHARITAT, G

BOUANANE, MA

ROSSEL, P

机构：

[1] Laboratoire d'Automatique et d'Analyse des Systèmes, CNRS, 31077 Toulouse Cedex

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90411-J

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A junction termination technique, combining the effect of a semi-resistive layer with a RESURF structure is evaluated for a LDMOST by bidimensional numerical analysis. It is shown that the drawbacks inherent to the RESURF principle, mainly the sensitivity to technological parameters, are bypassed by using a semi-resistive layer. Quantitative analysis shows that the breakdown voltage can be kept at its optimal value even with commercial epitaxial wafer tolerances. The breakdown voltage value is calculated versus the oxide thickness, epi-thickness. Effects on the On resistance and the switching performances are quickly discussed.

引用

页码：149 / 152

页数：4

共 10 条

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