PHOTOREFRACTIVE RESPONSE OF CDTE-V UNDER AC ELECTRIC-FIELD FROM 1 TO 1.5 MU-M

被引：20

作者：

BELAUD, Y ^{[1
]}

DELAYE, P ^{[1
]}

LAUNAY, JC ^{[1
]}

ROOSEN, G ^{[1
]}

机构：

[1] POLE RECH AQUITAIN MAT ESPACE,F-33165 ST MEDARD,FRANCE

来源：

OPTICS COMMUNICATIONS | 1994年 / 105卷 / 3-4期

关键词：

D O I：

10.1016/0030-4018(94)90716-1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The ac field technique leading to the enhancement of the photorefractive effect is applied to vanadium-doped cadmium telluride. Net photorefractive gain is obtained for the three wavelengths studied: 1.06 mu m, 1.32 mu m and 1.55 mu m. A change in the sign of the photorefractive gain between 1.06 mu m and 1.55 mu m is observed, which represents the first evidence of an electron-hole competition in this material. Theoretical interpretation is performed using an extension of the ac field theoretical model with bipolar conduction.

引用

页码：204 / 208

页数：5

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