INFLUENCE OF THE PREOXIDATION CLEANING ON THE ELECTRICAL-PROPERTIES OF THIN SIO2 LAYERS

被引：15

作者：

PROM, JL

CASTAGNE, J

SARRABAYROUSE, G

MUNOZYAGUE, A

机构：

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1988年 / 135卷 / 01期

关键词：

D O I：

10.1049/ip-i-1.1988.0005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

FILMS

引用

页码：20 / 22

页数：3

共 15 条

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[6] A VISCOUS-FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH-DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURES [J].

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TIERNEY, E ;

ANGILELLO, J .

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[7] SILICON OXIDATION STUDIES - A REVISED MODEL FOR THERMAL-OXIDATION [J].

IRENE, EA .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5416-5420

[8]

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[9]

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[10]

KUSAKA T, 1985, IEEE ELECTRON DEVICE, V8, P61

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