ELECTRON POPULATION INVERSION IN GAAS INDUCED BY HIGH ELECTRIC FIELDS

被引：26

作者：

FAWCETT, W

REES, HD

机构：

[1] Royal Radar Establishment, Malvern, Worcestershire

来源：

PHYSICS LETTERS A | 1969年 / A 28卷 / 11期

关键词：

D O I：

10.1016/0375-9601(69)90588-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Calculations of the electron distribution for the 〈000〉 valley in GaAs for high electric fields predict a population inversion transverse to the field. © 1969.

引用

收藏

页码：731 / &

相关论文

共 5 条

[1] MONTE CARLO CALCULATION OF VELOCITY-FIELD RELATIONSHIP FOR GALLIUM ARSENIDE [J].

BOARDMAN, AD ;

FAWCETT, W ;

REES, HD .

SOLID STATE COMMUNICATIONS, 1968, 6 (05) :305-&

[2]

FAWCETT W, TO BE PUBLISHED

[3] LIGHT SCATTERING FROM SINGLE-PARTICLE ELECTRON EXCITATIONS IN SEMICONDUCTORS [J].

MOORADIAN, A .

PHYSICAL REVIEW LETTERS, 1968, 20 (20) :1102-+

[4] CALCULATION OF STEADY STATE DISTRIBUTION FUNCTIONS BY EXPLOITING STABILITY [J].

REES, HD .

PHYSICS LETTERS A, 1968, A 26 (09) :416-&

[5] TOTAL NEGATIVE PHOTOCONDUCTANCE IN SOLIDS AND POSSIBILITY OF A NEW TYPE OF INSTABILITY [J].

STOCKER, HJ .

PHYSICAL REVIEW LETTERS, 1967, 18 (26) :1197-&