BROAD-BAND DETERMINATION OF THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT

被引：224

作者：

BERROTH, M

BOSCH, R

机构：

[1] Fraunhofer Institute for Applied Solid State Physics, Freiburg, Eckerstr. 4

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1990年 / 38卷 / 07期

关键词：

D O I：

10.1109/22.55781

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved method to determine the broad-band small-signal equivalent circuit of field effect transistors (FET's) is proposed. This method is based on an analytic solution of the equations for the Y parameters of the intrinsic device and allows direct determination of the circuit elements at any specific frequency or averaged over a frequency range. The validity of the equivalent circuit can be verified by showing the frequency independence of each element. The method can be used for the whole range of measurement frequencies and can even be applied to devices exhibiting severe low-frequency effects. © 1990 IEEE

引用

页码：891 / 895

页数：5

共 5 条

[1]

CHEN TH, 1988, 1988 GAAS IC S NASHV, P49

[2] SELF-CONSISTENT GAAS-FET MODELS FOR AMPLIFIER DESIGN AND DEVICE DIAGNOSTICS [J].