EXPERIMENTAL AND THEORETICAL-STUDY OF THE CHARGE BUILDUP IN AN ECR ETCHER

被引：19

作者：

NAMURA, T ^{[1
]}

OKADA, H ^{[1
]}

NAITOH, Y ^{[1
]}

TODOKORO, Y ^{[1
]}

INOUE, M ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,VLSI TECHNOL RES LAB,MORIGUCHI,OSAKA 570,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 10期

关键词：

Charge build-up; ECR etcher; Equivalent circuit; MNOS capacitor; MOS capacitor breakdown; RF bias;

D O I：

10.1143/JJAP.29.2251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The charge build-up in an electron cyclotron resonance (ECR) etcher has been studied experimentally and theoretically. The experimental results show that the charge build-up profiles of the wafer are convex and positive, and are detected only when the RF bias exists. We have derived a simplified equivalent circuit model for the wafer in an ECR etcher. The charge build-up profile predicted with the simplified equivalent circuit model shows a good agreement with the experimental results. It is concluded that the variation of plasma potential caused by the radial RF current across the magnetic field results in the charge build-up. © 1990 IOP Publishing Ltd.

引用

页码：2251 / 2254

页数：4