HIGH-TEMPERATURE ELECTRICAL PROPERTIES OF ZNTE - A1 - SELF-COMPENSATION MODEL IN ZNTE

被引：7

作者：

CALLISTER, WD

LARSEN, TL

VAROTTO, CF

STEVENSON, DA

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1972年 / 33卷 / 07期

关键词：

D O I：

10.1016/S0022-3697(72)80436-0

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1433 / +

页数：1

共 16 条

[1] COMPOSITION STABILITY LIMITS OF BINARY SEMICONDUCTOR COMPOUNDS [J].

BREBRICK, RF .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 18 (2-3) :116-128

[2]

CALLISTER WD, TO BE PUBLISHED

[3]

Dieleman J., 1967, IIVI semiconducting compounds 1967 international conference, P199

[4]

FISCHER AG, 1964, J SOLID STATE COMMUN, V2, P157

[5] EFFECT OF DOUBLY IONIZABLE VANCANCY ACCEPTORS ON CONDUCTIVITY OF DONOR DOPED SEMICONDUCTING COMPOUNDS WITH SPECIAL REFERENCE TO CDTE AND ZNTE [J].

KROGER, FA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (12) :1717-&

[6]

KROGER FA, 1956, SOLID STATE PHYSICS, V3

[7] ELECTRICAL TRANSPORT AND PHOTOELECTRONIC PROPERTIES OF ZNTEAL CRYSTALS [J].

LARSEN, TL ;

STEVENSON, DA ;

VAROTTO, CF .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) :172-+

[8]

LARSEN TL, 1970, THESIS STANFORD U

[9] IONIZATION INTERACTION BETWEEN IMPURITIES IN SEMICONDUCTORS AND INSULATORS [J].

LONGINI, RL ;

GREENE, RF .

PHYSICAL REVIEW, 1956, 102 (04) :992-999

[10] SELF-COMPENSATION LIMITED CONDUCTIVITY IN BINARY SEMICONDUCTORS .1. THEORY [J].

MANDEL, G .

PHYSICAL REVIEW, 1964, 134 (4A) :1073-+

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