DOPING DEPENDENCE OF THE CHEMICAL-POTENTIAL IN BI2SR2CA1-XYXCU2O8+DELTA

被引：67

作者：

VANVEENENDAAL, MA ^{[1
]}

SCHLATMANN, R ^{[1
]}

SAWATZKY, GA ^{[1
]}

GROEN, WA ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 01期

关键词：

D O I：

10.1103/PhysRevB.47.446

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A detailed study of the doping dependence of valence- and core-level spectra of Bi2Sr2Ca1-xYxCu2O8+delta leads to the conclusion that the chemical potential shifts in a manner consistent with that of a simple doped semiconductor. The spectroscopically observed filling in of the gap upon doping of the correlated insulator is therefore not due to midgap states pinning the Fermi level, but most likely due to spectral weight resulting from the incoherent part of the one-electron Green's function.

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页码：446 / 450

页数：5

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