NOVEL FATIGUE-FREE LAYERED STRUCTURE FERROELECTRIC THIN-FILMS

被引：143

作者：

DESU, SB

VIJAY, DP

机构：

[1] Department of Materials Science and Engineering, Virginia Polytechnic Institute, State University, Blacksburg

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 32卷 / 1-2期

关键词：

FERROELECTRIC; STRONTIUM BIOMUTH TANTALATE; FATIGUE; LAYERED STRUCTURE;

D O I：

10.1016/0921-5107(95)80017-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For the first time, fatigue-free ferroelectric thin-film capacitors have been fabricated, using pulsed laser deposition, with the layer-structure family of oxides as the ferroelectric material. Stoichiometric thin films of layer-structured SiBr2(TaxNb2-x)O-9 (0<x<2) compounds were successfully deposited on platinized Si/SiO2 wafers. Technological opportunities now exist for the development of commercially viable ferroelectric random access memory devices using these materials. So far, this has been primarily hindered by degradation problems such as fatigue in the currently investigated ferroelectric thin film capacitors, e.g. PbZrxTi1-xO3 films on Pt electrodes. The identification of these fatigue-free thin-film materials and their processing, structure and properties are discussed in this paper. The films show very good hysteresis characteristics with a remnant polarization value of 11 mu C cm(-2), and no fatigue was observed up to 10(9) switching cycles.

引用

页码：75 / 81

页数：7

共 20 条

[1]

Scott, Paz de Araujo, Science, 246, pp. 1400-1405, (1989)

[2]

Parker, Tasch, Ferroelectric materials for 64 Mb and 256 Mb DRAMs, IEEE Circuits and Devices Magazine, (1990)

[3]

Jaffe, Cook, Jaffe, Piezoceramics, pp. 10-13, (1971)

[4]

Zheludev, Physics of Crystalline Dielectrics, Electrical Properties, 2, pp. 474-490, (1971)

[5]

Kudzin, Panchenko, Yudin, Sov. Phys. Solid State, 16, (1975)

[6]

Duiker, Beale, Scott, Paz de Araujo, Melnick, Cuchlaro, McMillan, J. Appl. Phys., 68, (1990)

[7]

Shepherd, Fatigue and Aging in Sol-Gel Derived PZT Thin Films, MRS Proceedings, 200, (1990)

[8]

Yoo, Desu, Mater. Sci. Eng., 13 B, (1992)

[9]

Yoo, Desu, Mechanism of Fatigue in Ferroelectric Thin Films, Physica Status Solidi (a), 133 a, (1992)

[10]

Yoo, Desu, J. Int. Mater. Sys., 4, (1993)

← 1 2 →