HALL AND MAGNETORESISTIVE EFFECT OF AMORPHOUS FE-SI FILMS

被引：12

作者：

SHIMADA, Y

KOJIMA, H

机构：

[1] Research Institute for Scientific Measurements, Tohoku University, Sendai

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 02期

关键词：

D O I：

10.1063/1.324631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurements on the Hall and the magnetoresistive effect in Fe-Si amorphous films are described. The spontaneous Hall constant Rs increases as the Si content increases. A sensitive irreversible change of Rs was observed by annealing. Rs increases by crystallization. The magnetoresistive effect Δρ/ρ is low but Δρ is comparable to those of Fe-Ni crystalline alloys.

引用

页码：932 / 933

页数：2

共 7 条

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[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4156 - 4159

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