EXTERNAL RESONATOR TURN-ON TIME-DELAY EFFECTS WITH GAAS INJECTION LASERS AT ROOM TEMPERATURE

被引：1

作者：

EDMONDS, HD

机构：

[1] Quantum Electronics Dept., IBM Corporation, Yorktown Heights

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 07期

关键词：

D O I：

10.1109/PROC.1969.7244

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stimulated emission has been observed at the end of the current pulse for a GaAs injection laser operated with an external resonator at room temperature. It has beon observed in the peak injection current range of 65–95 A and for current pulse half-widths in the investigated range of 250–500 ns. This effect was found only when a diode was operated with the external resonator. Stimulated emission both during the current pulse and at the end of the current pulse also has been observed. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

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页码：1307 / +

页数：1

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