EFFICIENT SHALLOW-HOMOJUNCTION GAAS SOLAR-CELLS BY MOLECULAR-BEAM EPITAXY

被引：7

作者：

FAN, JCC

CALAWA, AR

CHAPMAN, RL

TURNER, GW

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 10期

关键词：

D O I：

10.1063/1.90943

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conversion efficiencies up to 16% at AM1 have been obtained for molecular beam epitaxy (MBE) GaAs solar cells utilizing a shallow-homojunction n +/p/p+ structure without a GaAlAs window. The n +, p, and p+ GaAs layers were all grown by MBE on single-crystal p+ GaAs substrates. Cell metallization was performed by electroplating, and an antireflection coating was formed by anodic oxidation of the n+ layer. These cells are the first efficient MBE solar cells of any type to be reported.

引用

页码：804 / 806

页数：3

共 10 条

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[2]

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[3]

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[5]

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[10] ISOTHERMAL ETCHBACK-REGROWTH METHOD FOR HIGH-EFFICIENCY GA1-XALXAS-GAAS SOLAR-CELLS [J].

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