EFFECT OF GRAIN-BOUNDARY SCATTERING ON THE ELECTRON-TRANSPORT OF ALUMINUM FILMS

被引：23

作者：

BANDYOPADHYAY, SK

PAL, AK

机构：

[1] Department of General Physics and X-rays, Indian Association for the Cultivation of Science

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1979年 / 12卷 / 06期

关键词：

D O I：

10.1088/0022-3727/12/6/018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical resistivity and temperature coefficient of the resistivity of polycrystalline aluminium films (500-1700 AA) deposited on to a glass substrate were measured in situ at temperatures of 50, 100 and 140 degrees C. The effect of grain boundary scattering was analysed using the Mayadas-Shatzkes theory (1970). It is observed that the Mayadas-Shatzkes equation reproduces the experimental observation quite faithfully with R=0.28 and p=0, which indicates that the contribution from grain boundary scattering should be quite appreciable.

引用

页码：953 / &

共 24 条

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