HIGH-QUALITY ALUMINUM NITRIDE EPITAXIAL LAYERS GROWN ON SAPPHIRE SUBSTRATES

被引：90

作者：

SAXLER, A

KUNG, P

SUN, CJ

BIGAN, E

RAZEGHI, M

机构：

[1] Center for Quantum Devices, Electrical Engineering and Computer Science Department, Northwestern University, Evanston

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.111168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we report the growth of high quality AlN epitaxial layers on sapphire substrates. The AlN grown on (00.1) sapphire exhibited a better crystalline quality than that grown on (01.2) sapphire. An x-ray rocking curve of AlN on (00.1) Al2O3 yielded a full width at half-maximum of 97.2 arcsec, which is the narrowest value reported to our knowledge. The AlN peak on (01.2) Al2O3 was about 30 times wider. The absorption edge measured by ultraviolet transmission spectroscopy for AlN grown on (00.1) Al2O3 was about 197 nm.

引用

页码：339 / 341

页数：3

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