INDIUM-PHOSPHIDE SURFACE PROCESSING - AN FTIR ANALYSIS

被引：8

作者：

HENRY, J

LIVINGSTONE, J

机构：

[1] Department of Electrical and Electronic Engineering, The University of Western Australia, Nedlands

来源：

APPLIED SURFACE SCIENCE | 1994年 / 78卷 / 02期

关键词：

Absorption - Contamination - Electron device manufacture - Etching - Impurities - Infrared spectroscopy - Semiconducting indium phosphide - Solutions - Substrates - Surface cleaning - Surface phenomena - Surface properties;

D O I：

10.1016/0169-4332(94)00026-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Infrared analyses of surface species have provided a new insight into the optimisation of contaminant removal from InP substrates which are treated by conventional cleaning/degreasing techniques in the initial stages of a multi-stage procedure prior to device fabrication. In this comparative study it has been shown quantitatively that one method is markedly superior in its ability to remove contaminants. Also these studies have indicated the damage to surfaces that can be caused by heat-degraded chemical solutions.

引用

页码：159 / 163

页数：5

共 5 条

[1] STUDY OF A CHEMICAL CLEANING OF INP(100) SUBSTRATES BY INFRARED-ABSORPTION AND NUCLEAR-REACTION ANALYSIS
BARRIERE, AS
DESBAT, B
MOMBELLI, B
TOURNAY, V
[J]. APPLIED SURFACE SCIENCE, 1993, 64 (03) : 225 - 230
[2] COUTTS TJ, 1985, CURRENT TOPICS PHOTO, V3, pCH2
[3] CHEMICAL CLEANING OF INP SURFACES - OXIDE COMPOSITION AND ELECTRICAL-PROPERTIES
GUIVARCH, A
LHARIDON, H
PELOUS, G
HOLLINGER, G
PERTOSA, P
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 1139 - 1148
[4] KERN W, 1970, RCA REV, V31, P207
[5] [No title captured]

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