MULTILAYERED ENCAPSULATION OF GAAS

被引：30

作者：

LIDOW, A

GIBBONS, JF

MAGEE, T

PENG, J

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

[2] ADV RES & APPLICAT CORP,SUNNYVALE,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 10期

关键词：

D O I：

10.1063/1.324417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method is described by which GaAs may be encapsulated to withstand annealing temperatures over 1100 °C using a double-layered encapsulant consisting of arsenic-doped silicon dioxide on top of plasma-deposited silcion nitride. Samples encapsulated in such a manner and annealed show no signs of mechanical failure and yield higher electrical activation of ion-implanted Se when compared to samples annealed with Si3N4 only. In addition, there is no detectable out-diffusion of Ga or As and no detectable in-diffusion of Si. Peak electrical activation of ion-implanted Se has been measured as 1×1019 carriers/cm3 for samples annealed at 1100 °C. A first-order strain analysis of general multilayered systems is also presented, indicating possible improvements on such an encapsulating procedure for GaAs as well as other compound semiconductors.

引用

页码：5213 / 5217

页数：5

共 22 条

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