AN ENERGY-RESOLVED, ELECTRON-STIMULATED DESORPTION STUDY OF HYDROGEN FROM CLEANED AND OXIDIZED SI(100)

Electron-stimulated desorption (ESD) was used to study the hydrogen present on cleaned and oxidized Si(100). Cleaning the surface by ion bombardment and annealing does not completely remove hydrogen from a Si(100) surface. Kinetic energy analysis of the hydrogen ions emitted through ESD shows that multiple states of adsorbed hydrogen are present. Electron beam exposure results in a depopulation of higher energy states. These states are repopulated upon annealing suggesting that the bulk silicon is a source of hydrogen. Oxygen exposure also results in a depopulation of the higher energy desorption states. Angle-resolved, energy-resolved ESD spectra of H+ from the cleaned Si(100) surface were also collected. They show that different hydrogen bonding states desorb at different angles relative to the surface plane with differing energy distributions.