STUDY OF THE CONCENTRATION DISTRIBUTION OF SIC VAPOR IN THE CRYSTAL-GROWTH ZONE

被引：5

作者：

LILOV, SK

YANCHEV, IY

机构：

[1] Department of Semiconductor Physics, Faculty of Physics, University of Sofia, 1126 Sofia

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 21卷 / 01期

关键词：

D O I：

10.1016/0921-5107(93)90270-W

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present work the gas dynamics in the growth zone of SiC crystals is investigated. It is shown that the propagation of SiC vapour from the growth cavity walls towards the lids is effected by diffusion. On this basis the calculation of the concentration distribution of SiC vapour, the equilibrium vapour concentration n(s) and the supersaturation alpha = [(n - n(s))/n(s)] x 100% in the crystal growth zone at different radial and axial temperature gradients is carried out by solving the Laplace equation in cylindrical coordinates for a stationary case corresponding to the conditions of crystal growth. The results obtained are compared with the available experimental data which gives a possibility for explaining some of the observed peculiarities during SiC crystal growth from the vapour phase by the sublimation method.

引用

页码：83 / 87

页数：5