LOCALIZED MAGNETIC-MOMENTS IN SI-P NEAR THE METAL-INSULATOR-TRANSITION

被引：63

作者：

LAKNER, M ^{[1
]}

VONLOHNEYSEN, H ^{[1
]}

LANGENFELD, A ^{[1
]}

WOLFLE, P ^{[1
]}

机构：

[1] UNIV KARLSRUHE,INST THEORIE KONDENSIERTEN MAT,D-76128 KARLSRUHE,GERMANY

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.50.17064

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report systematic specific-heat measurements of crystalline Si doped with P in the concentration range enclosing the metal-insulator transition, in the temperature range from 40 mK to 3 K and in magnetic fields up to 7 T. The data can be interpreted in terms of a phonon contribution, a term linear in T due to itinerant electrons, which persists even on the insulating side, and an excess contribution ΔC varying sublinearly with temperature. The strong magnetic field dependence of ΔC suggests an interpretation in terms of local magnetic moments. We discuss a theoretical model for the metallic phase, which provides a quantitative description of the concentration of local moments. We show that the temperature power law in zero field can be explained by the Kondo effect. © 1994 The American Physical Society.

引用

页码：17064 / 17073

页数：10

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