EPITAXIAL ELECTROOPTICAL SRXBA1-XNB2O6 FILMS BY SINGLE-SOURCE PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：19

作者：

ZHU, LD

ZHAO, J

WANG, F

NORRIS, PE

FOGARTY, GD

STEINER, B

LU, P

KEAR, B

KANG, SB

GALLOIS, B

SINCLAIR, M

DIMOS, D

CRONINGOLOMB, M

机构：

[1] NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899

[2] RUTGERS STATE UNIV,NEW BRUNSWICK,NJ 08854

[3] STEVENS INST TECHNOL,HOBOKEN,NJ 07030

[4] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

[5] TUFTS UNIV,CTR ELECTROOPT TECHNOL,MEDFORD,MA 02155

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 13期

关键词：

D O I：

10.1063/1.115419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SrxBa1-xNb2O6 films have been epitaxially grown on MgO substrates by a single-source plasma-enhanced chemical vapor deposition (PE-CVD). Exceptionally high quality of the epitaxial films was observed as indicated by high-resolution synchrotron x-ray diffract ion imaging. The films exhibit waveguiding behavior with values of refractive index and the linear electro-optic coefficient r(51) close to those of bulk crystals. (C) 1995 American Institute of Physics.

引用

页码：1836 / 1838

页数：3

共 11 条

[1]

FOGARTY GD, UNPUB

[2] OPTICAL-MATERIALS [J].