IMPROVED SUBTHRESHOLD CHARACTERISTICS OF N-CHANNEL SOI TRANSISTORS

被引：68

作者：

DAVIS, JR ^{[1
]}

GLACCUM, AE ^{[1
]}

REESON, K ^{[1
]}

HEMMENT, PLF ^{[1
]}

机构：

[1] UNIV SURREY,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

关键词：

D O I：

10.1109/EDL.1986.26477

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：570 / 572

页数：3

共 8 条

[1] ARMSTRONG GA, 1986, SIMULATION SEMICONDU, V2, P449
[2] SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS
COLINGE, JP
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 244 - 246
[3] DAVIS JR, UNPUB APPL PHYS LETT
[4] HSU FC, 1982, IEEE T ELECTRON DEV, V29, P1735
[5] NUMERICAL-ANALYSIS OF SWITCHING CHARACTERISTICS IN SOI MOSFETS
KATO, K
TANIGUCHI, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) : 133 - 139
[6] ANALYSIS OF KINK CHARACTERISTICS IN SILICON-ON-INSULATOR MOSFETS USING 2-CARRIER MODELING
KATO, K
WADA, T
TANIGUCHI, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 458 - 462
[7] SZE SM, 1981, PHYSICS SEMICONDUCTO
[8] TUPPEN CG, 1985, THIN SOLID FILMS, V113, P233