MEASUREMENT OF LOW ENERGY X-RAYS .V. TOTAL ABSORPTION SILICON DEVICES

被引：4

作者：

GREENING, JR

RANDLE, KJ

REDPATH, AT

机构：

[1] Edinburgh Univ., Dept. Medical Physics, Royal Infirmary, Edinburgh

来源：

PHYSICS IN MEDICINE AND BIOLOGY | 1969年 / 14卷 / 01期

关键词：

D O I：

10.1088/0031-9155/14/1/004

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

A description is given of the use of silicon barrier layer and lithium drifted detectors for the measurement of X-rays generated at 10 to 30 kv. Defined X-ray beams are totally absorbed in silicon, and by comparing the charge so produced with the beam energy as measured with a total absorption calorimeter, a value of 3.69+or-0.02 ev per electron-hole pair in silicon is derived. The saturation characteristics of the devices are discussed together with their merits for X-ray measurement.

引用

页码：55 / &

共 6 条

[1]

DEARNALEY G, 1966, SEMICONDUCTOR COUNTE

[2] MEASUREMENT OF LOW ENERGY X-RAYS .4. TOTAL ABSORPTION IONIZATION CHAMBER [J].