50 GHZ INGAAS EDGE-COUPLED PIN PHOTODETECTOR

被引：48

作者：

WAKE, D

SPOONER, TP

PERRIN, SD

HENNING, ID

机构：

[1] British Telecom Research Laboratories, Martlesham Heath Ipswich

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 12期

关键词：

PHOTODETECTORS; OPTICAL DETECTORS; OPTOELECTRONICS;

D O I：

10.1049/el:19910666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An edge-coupled pin photodetector with an InGaAs absorber layer has been designed and fabricated. Values of bandwidth at 1530 nm, with and without bias, have been measured as 50 GHz and 20 GHz, respectively. The external quantum efficiency is as high as 40% using a standard 12-mu-m radius lens-ended singlemode fibre.

引用

页码：1073 / 1075

页数：3

共 4 条

[1] ULTRAWIDE-BAND LONG-WAVELENGTH P-I-N PHOTODETECTORS
BOWERS, JE
BURRUS, CA
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (10) : 1339 - 1350
[2] COAXIALLY MOUNTED 67 GHZ BANDWIDTH INGAAS PIN PHOTODIODE
TUCKER, RS
TAYLOR, AJ
BURRUS, CA
EISENSTEIN, G
WIESENFELD, JM
[J]. ELECTRONICS LETTERS, 1986, 22 (17) : 917 - 918
[3] PLANAR-JUNCTION, TOP-ILLUMINATED GAINAS/INP PIN PHOTODIODE WITH BANDWIDTH OF 25 GHZ
WAKE, D
WALLING, RH
HENNING, ID
PARKER, DG
[J]. ELECTRONICS LETTERS, 1989, 25 (15) : 967 - 969
[4] A FRONT-SIDE-ILLUMINATED INP GAINAS INP P-I-N PHOTODIODE WITH A -3-DB BANDWIDTH IN EXCESS OF 18 GHZ
WANG, SY
CAREY, KW
KOLNER, BH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) : 938 - 940

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