INFLUENCE OF SURFACE BAND BENDING ON INCORPORATION OF IMPURITIES IN SEMICONDUCTORS - TE IN GAAS

被引：52

作者：

CASEY, HC

PANISH, MB

WOLFSTIRN, KB

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1971年 / 32卷 / 03期

关键词：

D O I：

10.1016/0022-3697(71)90006-0

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

收藏

页码：571 / +

页数：1

相关论文

共 36 条

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[4] IONIZATION ENERGY AND IMPURITY BAND CONDUCTION OF SHALLOW DONORS IN N-GALLIUM ARSENIDE
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[5] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P77
[6] CASEY HW, UNPUBLISHED
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[10] Measurement on gallium- and indium-compounds X Gallium and Indium chalcogenides
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