EFFECTS OF A THIN SIO2 LAYER ON THE FORMATION OF METAL-SILICON CONTACTS

被引：45

作者：

GOODNICK, SM

FATHIPOUR, M

ELLSWORTH, DL

WILMSEN, CW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.570962

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：949 / 954

页数：6

共 36 条

[1] PHOTOEMISSION INVESTIGATION OF THE TEMPERATURE EFFECT ON SI-AU INTERFACES [J].

ABBATI, I ;

BRAICOVICH, L ;

FRANCIOSI, A ;

LINDAU, I ;

SKEATH, PR ;

SU, CY ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :930-935

[2] SURFACE-REACTIONS ON MOS STRUCTURES [J].

ALESSANDRINI, EI ;

CAMPBELL, DR ;

TU, KM .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4888-4893

[3] INTERFACIAL REACTION IN MOS STRUCTURES [J].

ALESSANDRINI, EI ;

CAMPBELL, DR ;

TU, KN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :55-57

[4] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[5]

BAUER RS, 1980, P C PHYS MOS INS

[6] ANALYTICAL STUDY OF PLATINUM SILICIDE FORMATION [J].

BINDELL, JB ;

COLBY, JW ;

WONSIDLER, DR ;

POATE, JM ;

CONLEY, DK ;

TISONE, TC .

THIN SOLID FILMS, 1976, 37 (03) :441-452

[7] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J].

BOWER, RW ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1972, 20 (09) :359-&

[8]

BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581

[9] PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS [J].

CANALI, C ;

CATELLANI, C ;

PRUDENZIATI, M ;

WADLIN, WH ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1977, 31 (01) :43-45

[10] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

← 1 2 3 4 →