EFFECTS OF A THIN SIO2 LAYER ON THE FORMATION OF METAL-SILICON CONTACTS

被引：45

作者：

GOODNICK, SM

FATHIPOUR, M

ELLSWORTH, DL

WILMSEN, CW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.570962

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：949 / 954

页数：6

共 36 条

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