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PHASE-SHIFT SPECTROSCOPY OF MODULATED PHOTOCURRENT - ITS APPLICATION TO GOLD LEVELS IN CRYSTALLINE SI
被引:9
作者
:
OHEDA, H
论文数:
0
引用数:
0
h-index:
0
OHEDA, H
OKUSHI, H
论文数:
0
引用数:
0
h-index:
0
OKUSHI, H
TOKUMARU, Y
论文数:
0
引用数:
0
h-index:
0
TOKUMARU, Y
TANAKA, K
论文数:
0
引用数:
0
h-index:
0
TANAKA, K
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1981年
/ 20卷
/ 09期
关键词
:
D O I
:
10.1143/JJAP.20.L689
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:L689 / L692
页数:4
相关论文
共 5 条
[1]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
[J].
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
:3023
-3032
[2]
ANALYSIS OF THE MODULATED PHOTOCURRENT IN AMORPHOUS-SEMICONDUCTORS
[J].
OHEDA, H
论文数:
0
引用数:
0
h-index:
0
OHEDA, H
.
SOLID STATE COMMUNICATIONS,
1980,
33
(02)
:203
-206
[3]
OHEDA H, J APPL PHYS
[4]
THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON
[J].
SAH, CT
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
SAH, CT
;
FORBES, L
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
FORBES, L
;
ROSIER, LI
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
ROSIER, LI
;
TASCH, AF
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
TASCH, AF
;
TOLE, AB
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
TOLE, AB
.
APPLIED PHYSICS LETTERS,
1969,
15
(05)
:145
-+
[5]
DLTS MEASUREMENT ON AU-DOPED SI P+N JUNCTIONS AND ITS COMPUTER-SIMULATION
[J].
TOKUMARU, Y
论文数:
0
引用数:
0
h-index:
0
TOKUMARU, Y
;
OKUSHI, H
论文数:
0
引用数:
0
h-index:
0
OKUSHI, H
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(12)
:2441
-2449
←
1
→
共 5 条
[1]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
[J].
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
:3023
-3032
[2]
ANALYSIS OF THE MODULATED PHOTOCURRENT IN AMORPHOUS-SEMICONDUCTORS
[J].
OHEDA, H
论文数:
0
引用数:
0
h-index:
0
OHEDA, H
.
SOLID STATE COMMUNICATIONS,
1980,
33
(02)
:203
-206
[3]
OHEDA H, J APPL PHYS
[4]
THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON
[J].
SAH, CT
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
SAH, CT
;
FORBES, L
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
FORBES, L
;
ROSIER, LI
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
ROSIER, LI
;
TASCH, AF
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
TASCH, AF
;
TOLE, AB
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
TOLE, AB
.
APPLIED PHYSICS LETTERS,
1969,
15
(05)
:145
-+
[5]
DLTS MEASUREMENT ON AU-DOPED SI P+N JUNCTIONS AND ITS COMPUTER-SIMULATION
[J].
TOKUMARU, Y
论文数:
0
引用数:
0
h-index:
0
TOKUMARU, Y
;
OKUSHI, H
论文数:
0
引用数:
0
h-index:
0
OKUSHI, H
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(12)
:2441
-2449
←
1
→