SURFACE-DIFFUSION OF ALAS ON GAAS IN METALORGANIC VAPOR-PHASE EPITAXY STUDIED BY HIGH-VACUUM SCANNING-TUNNELING-MICROSCOPY

被引：15

作者：

KASU, M

KOBAYASHI, N

机构：

[1] NTT Basic Research Laboratories, Atsugi, Kanagawa 243-01

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 19期

关键词：

D O I：

10.1063/1.114803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

After depositing a 1/6 monolayer of AlAs on a very flat GaAs (001) surface by metalorganic vapor-phase epitaxy, we have studied AlAs two-dimensional (2D) nuclei by high-vacuum scanning tunneling microscopy. AlAs 2D nuclei elongate in the [110] direction, like GaAs. The density of AlAs 2D nuclei in the saturation region was 5x10(10) cm(-2) at 580 degrees C. The saturated AlAs 2D nucleus density decreased as the temperature increased. From the saturated AlAs 2D nucleus densities the surface diffusion coefficient of AlAs on GaAs was calculated to be 1.5 X 10(-7) cm(2)/s at 530 degrees C. This is one order of magnitude smaller than that of GaAs on GaAs. (C) 1995 American Institute of Physics.

引用

页码：2842 / 2844

页数：3