ABSOLUTE NEGATIVE-RESISTANCE IN DOUBLE-BARRIER HETEROSTRUCTURES IN A STRONG LASER FIELD

被引:48
作者
DAKHNOVSKII, Y [1 ]
METIU, H [1 ]
机构
[1] UNIV CALIF SANTA BARBARA, DEPT CHEM, SANTA BARBARA, CA 93106 USA
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 07期
关键词
D O I
10.1103/PhysRevB.51.4193
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A tunneling current through a double-barrier heterostructure is considered in a strong laser field. By absorbing or emitting photons an electron can penetrate through the barrier structure. As shown, the current may have both positive and negative signs dependent on the intensity of the field. I-V characteristics have a peak structure with the peaks located by an energy of two photons apart from each other. The negative amplitude of the current demonstrates the effect of an absolute negative resistance. The I-V characteristics are studied at different temperatures because of a hot-electron-distribution Fermi function in the strong field. The expression for the tunneling current is generalized to asymmetric barriers, and to the case when the Fermi energy is larger than the energy of one photon as well. © 1995 The American Physical Society.
引用
收藏
页码:4193 / 4199
页数:7
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