EXCITATION INTENSITY EFFECT IN BAND-EDGE EMISSION OF GAAS AND CDSE

被引：10

作者：

YEE, JH

CONDAS, GA

机构：

[1] Lawrence Radiation Laboratory, University of California, Livermore, CA

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 01期

关键词：

D O I：

10.1063/1.1655765

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：351 / +

页数：1

共 15 条

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CONDAS, GA ;

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[4]

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[6] INFRARED LATTICE REFLECTION SPECTRA OF III-V COMPOUND SEMICONDUCTORS [J].

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[8] RECOMBINATION RADIATION IN GAAS [J].

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BURNS, G .

PHYSICAL REVIEW, 1963, 129 (01) :125-&

[9]

NIKITINE S, 1961, J APPL PHYS, V32, P2271, DOI 10.1063/1.1777058

[10]

SHIOZAWA LP, 1958, 30141G CLEV RES CENT

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