ANALYTICAL DESCRIPTIONS OF THE BAND-STRUCTURE OF DIRECT-BAND-GAP ZINC-BLENDE-STRUCTURE SEMICONDUCTORS IN THE K.P KANE MODEL

被引:8
作者
DROUHIN, HJ
PERETTI, J
机构
[1] Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 15期
关键词
D O I
10.1103/PhysRevB.44.7993
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the framework of the well-known k.p Kane band theory, accurate analytical approximations of conduction- and valence-band dispersion of direct-band-gap zine-blende-structure semiconductors are derived when the spin-orbit-splitting energy does not exceed the band-gap energy. These approximations include the interactions with the remote bands. The expressions of the eigenfunctions are also obtained. The present analysis elucidates and unifies previous analytical band descriptions.
引用
收藏
页码:7993 / 7998
页数:6
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