EVALUATION OF SOME MANGANESE FEEDSTOCKS FOR MOCVD

Devices applicable to the telecommunication and information industries can be fabricated from II-VI semiconductors incorporating manganese at doping or more substantial concentrations. It is desirable to grow thin films of these materials at low temperature by MOCVD in order to improve crystallinity and reduce solid state diffusion effects. Previously reported manganese MOCVD feedstocks have too high a decomposition temperature to be used directly in low temperature growth without precracking or plasma assistance. This paper reviews properties and preparation of some manganese compounds which might find application in low temperature MOCVD. Thermal analysis data for three manganese compounds is presented. The most promising compound is MeMn(CO)5, and details of its preparation and purification are given.