BEHAVIOUR OF PRIMARY DEFECTS IN ELECTRON-IRRADIATED GERMANIUM

[1] Bourgoin J., 1970, Radiation Effects, V2, P287, DOI 10.1080/00337576908243991

[2] BOURGOIN J, 1969, PHYS LETT NETHERLA A, V30, P4

[3] BOURGOIN J, 1968, RADIATION EFFECTS SE, P210

[4] CALCOTT RA, 1967, PHYS REV, V161, P3

[5] DEANGELIS HM, 1968, PHYS REV, V39, P5842

[6] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &

[7] HIRAKI A, 1967, J APPL PHYS, V38, P9

[8] KLONTZ EE, 1963, J PHYS SOC JAPAN S3, V18, P216

[9] LOW-TEMPERATURE ANNEALING STUDIES IN GE [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1269 - 1274

[10] MACKAY JW, 1968, RADIATION EFFECTS SE, P175

[1] Bourgoin J., 1970, Radiation Effects, V2, P287, DOI 10.1080/00337576908243991

[2] BOURGOIN J, 1969, PHYS LETT NETHERLA A, V30, P4

[3] BOURGOIN J, 1968, RADIATION EFFECTS SE, P210

[4] CALCOTT RA, 1967, PHYS REV, V161, P3

[5] DEANGELIS HM, 1968, PHYS REV, V39, P5842

[6] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &

[7] HIRAKI A, 1967, J APPL PHYS, V38, P9

[8] KLONTZ EE, 1963, J PHYS SOC JAPAN S3, V18, P216

[9] LOW-TEMPERATURE ANNEALING STUDIES IN GE [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1269 - 1274

[10] MACKAY JW, 1968, RADIATION EFFECTS SE, P175