X-RAY ESCAPE PEAK VARIATIONS IN DIODES MADE FROM DOUBLY TRAVELING SOLVENT GROWN P-TYPE CDTE

被引：9

作者：

JAGER, H ^{[1
]}

THIEL, R ^{[1
]}

机构：

[1] BATTELLE INST,D-6000 FRANKFURT,FED REP GER

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1977年 / 12卷 / 02期

关键词：

D O I：

10.1051/rphysap:01977001202029300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：293 / 296

页数：4

共 8 条

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[6] UNDOPED SEMI-INSULATING CADMIUM TELLURIDE FOR GAMMA-RAY DETECTORS [J].

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[8] PURIFICATION OF CDTE FROM TELLURIUM-RICH SOLUTIONS [J].

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