INFLUENCE OF STACKING DISORDER ON WANNIER EXCITONS IN LAYERED SEMICONDUCTORS

被引：48

作者：

FORNEY, JJ ^{[1
]}

MASCHKE, K ^{[1
]}

MOOSER, E ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE,PHYS APPL LAB,CH-1007 LAUSANNE,SWITZERLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1977年 / 10卷 / 11期

关键词：

D O I：

10.1088/0022-3719/10/11/023

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1887 / 1894

页数：8

共 9 条

[1] BREBNER JL, 1967, HELV PHYS ACTA, V40, P382
[2] EXCITONS IN GASE POLYTYPES
BREBNER, JL
MOOSER, E
[J]. PHYSICS LETTERS A, 1967, A 24 (05) : 274 - &
[3] STACKING-FAULT SPLITTING OF EXCITON-STATES IN GASE
KURODA, N
NISHINA, Y
[J]. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1976, 32 (01): : 109 - 116
[4] LECHI T, 1975, J PHYS CHEM SOLIDS, V36, P699
[5] INFLUENCE OF STACKING DISORDER ON ELECTRONIC PROPERTIES OF LAYERED SEMICONDUCTORS
MASCHKE, K
SCHMID, P
[J]. PHYSICAL REVIEW B, 1975, 12 (10): : 4312 - 4315
[6] BAND-GAP EXCITONS IN GALLIUM SELENIDE
MOOSER, E
SCHLUTER, M
[J]. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1973, B 18 (01): : 164 - 208
[7] GASE - LAYER COMPOUND WITH ANOMALOUS VALENCE-BAND ANISOTROPY
OTTAVIANI, G
CANALI, C
NAVA, F
SCHMID, P
MOOSER, E
MINDER, R
ZSCHOKKE, I
[J]. SOLID STATE COMMUNICATIONS, 1974, 14 (10) : 933 - 936
[8] ELECTRONIC-STRUCTURE OF GASE
SCHLUTER, M
[J]. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1973, B 13 (02): : 313 - 360
[9] PHOTOLUMINESCENCE OF GASE
VOITCHOVSKY, JP
MERCIER, A
[J]. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-BASIC TOPICS IN PHYSICS, 1974, B 22 (02): : 273 - 292