ROLE OF SUBSTRATE DISLOCATIONS AND GRAIN-BOUNDARIES IN THE NUCLEATION AND GROWTH OF THIN ELECTROCHEMICAL OVERGROWTHS - TEM AND FIM STUDIES

被引:4
作者
MURR, LE
INAL, OT
机构
[1] Department of Metallurgical and Materials Engineering, New Mexico Institute of Mining and Technology, Socorro
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 51卷 / 02期
关键词
D O I
10.1002/pssa.2210510205
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin coatings of nickel are electroplated onto annealed (0.2 mm grain size) copper substrates and annealed and shock‐loaded copper substrates. The shock loading produces a sub‐grain dislocation cell structure without distorting the grain boundaries. Selective chemical stripping produces thin nickel electrodeposits and thin nickel/copper composites which are observed by transmission electron microscopy. Neither the grain boundaries nor the dislocation substructure of the copper substrates are observed to directly influence the nucleation and growth of the defect structure of the nickel overgrowths. Thin films of aluminum and copper with various grain sizes and dislocation structure are also prepared by vapor deposition onto (001) NaCl crystals and when used as substrates to precipitate copper from an aqueous CuSO4 solution by electrochemical displacement reactions, and the copper nuclei upon the substrate films viewed simultaneously in the transmission electron microscope, there is also no observable influence of either the emerging dislocations in the substrate film surface or the grain boundaries on the density or disposition of the copper nuclei. Finally, grain boundaries in the surface of tungsten emission and forms used as substrates for the electroplating of nickel from a (NiSO4)6 · 6H2O‐aqueous solution, and systematically examined by field evaporation of individual overgrowth atomic layers in the field‐ion microscope also show that the grain boundary is not propagated directly into the overgrowth for any more than a few atom layers near the substrate. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
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页码:345 / 358
页数:14
相关论文
共 14 条
[1]   THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].
BURTON, WK ;
CABRERA, N ;
FRANK, FC .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358
[2]  
Chopra K.L, 1969, THIN FILM PHENOMENA
[3]   THE KINETICS OF THE ELECTRODEPOSITION AND DISSOLUTION OF METAL MONOLAYERS AS A FUNCTION OF DISLOCATION DENSITY [J].
DAMJANOVIC, A ;
BOCKRIS, JO .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (10) :1035-1044
[4]  
DAMJANOVIC A, 1965, PLATING, V52, P1017
[5]  
Gileadi E, 1975, INTERFACIAL ELECTROC
[6]  
GRADMANN U, 1966, ANN PHYS-BERLIN, V17, P91
[7]  
GUNDILER I, 1976, THIN SOLID FILMS, V37, P387, DOI 10.1016/0040-6090(76)90608-8
[8]   ON THEORY OF INTERFACIAL ENERGY AND ELASTIC STRAIN OF EPITAXIAL OVERGROWTHS IN PARALLEL ALIGNMENT ON SINGLE CRYSTAL SUBSTRATES [J].
JESSER, WA ;
KUHLMANN.D .
PHYSICA STATUS SOLIDI, 1967, 19 (01) :95-&
[9]   ACCOMMODATION OF MISFIT BETWEEN SINGLE-CRYSTAL FILMS OF NICKEL AND COPPER [J].
MATTHEWS, JW ;
CRAWFORD, JL .
THIN SOLID FILMS, 1970, 5 (03) :187-&
[10]   CHARACTERIZATION OF COPPER NUCLEATION AND GROWTH FROM AQUEOUS-SOLUTION ON ALUMINUM - TRANSMISSION ELECTRON-MICROSCOPY STUDY OF COPPER CEMENTATION [J].
MURR, LE ;
ANNAMALAI, V .
THIN SOLID FILMS, 1978, 54 (02) :189-195