GRAIN-GROWTH DURING GAS-PRESSURE SINTERING OF BETA-SILICON NITRIDE

被引:128
作者
MITOMO, M
TSUTSUMI, M
TANAKA, H
UENOSONO, S
SAITO, F
机构
[1] KAWASAKI STEEL CHEM IND CO LTD,HIGH TECHNOL RES INST,CHIBA 260,JAPAN
[2] KAWASAKI STEEL SYST RES & DEV CORP,CHIBA 260,JAPAN
关键词
fracture toughness; grain growth; powders; silicon nitride; sintering;
D O I
10.1111/j.1151-2916.1990.tb07610.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The microstructures of gas‐pressure‐sintered materials from β‐Si3N4 powder were characterized in terms of the diameter and aspect ratio of the grains. The size distributions of diameters in materials fabricated by heating for 1 h at 1850° to 2000°C were nearly constant when they were normalized by average diameters because of normal grain growth. The rate‐determining step in the densification and grain growth was expected to be the diffusion of materials through the liquid phase. The activation energy for grain growth was 372 kJ/mol. The average aspect ratio of the grains was 3 to 4, whereas that of large grains was smaller because of shape accommodation. The fracture toughness was about the same as that of material from α‐Si3N4 powder despite the smaller aspect ratio of the grains Copyright © 1990, Wiley Blackwell. All rights reserved
引用
收藏
页码:2441 / 2445
页数:5
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