MODEL FOR INVERSE DIELECTRIC MATRICES OF SEMICONDUCTORS

被引：5

作者：

BECHSTEDT, F ^{[1
]}

FIEDLER, M ^{[1
]}

KRESS, C ^{[1
]}

DELSOLE, R ^{[1
]}

机构：

[1] UNIV ROMA TOR VERGATA,DIPARTIMENTO FIS,I-00173 ROME,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 89卷 / 08期

关键词：

D O I：

10.1016/0038-1098(94)90573-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A model for the static inverse dielectric matrix is proposed. For covalent materials the resulting off-diagonal elements are compared with inverted RPA dielectric matrices obtained from energy-band calculations. Because of the good agreement the model is used in self-energy calculations to obtain quasiparticle energies. It is shown that the local-field contributions to the exchange-correlation self-energy are reasonably described.

引用

页码：669 / 672

页数：4

共 22 条

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