SELF-TRAPPING OF POSITIVELY CHARGED-PARTICLES IN METALS

[1] [Anonymous], 1968, SOLID STATE PHYS, DOI DOI 10.1016/S0081-1947(08)60741-9

[2] Balluffi R. W., 1970, VACANCIES INTERSTITI, P125

[3] EFFECT OF VACANCY FORMATION ON TEMPERATURE DEPENDENCE OF POSITRON LIFETIME [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (17) : 1203 - +

[4] MOTION OF POSITRONS IN METALS [J]. APPLIED PHYSICS, 1974, 4 (01): : 25 - 35

[5] THE ELECTRONIC STRUCTURE OF V-CENTERS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 3 (3-4) : 178 - 195

[6] POSITRON ANNIHILATION AND DEFECTS IN METALS [J]. PHYSICS LETTERS A, 1969, A 30 (01) : 24 - &

[7] TEMPERATURE-DEPENDENCE OF POSITION TRAPPING RATE AT LATTICE VACANCIES [J]. PHYSICS LETTERS A, 1973, A 43 (04) : 395 - 396

[8] Doyama M., 1973, Crystal Lattice Defects, V4, P139

[9] SLOW ELECTRONS IN A POLAR CRYSTAL [J]. PHYSICAL REVIEW, 1955, 97 (03): : 660 - 665

[10] THEORETICAL FOUNDATION AND EXTENSION OF TRAPPING MODEL [J]. APPLIED PHYSICS, 1974, 3 (01): : 61 - 66

[1] [Anonymous], 1968, SOLID STATE PHYS, DOI DOI 10.1016/S0081-1947(08)60741-9

[2] Balluffi R. W., 1970, VACANCIES INTERSTITI, P125

[3] EFFECT OF VACANCY FORMATION ON TEMPERATURE DEPENDENCE OF POSITRON LIFETIME [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (17) : 1203 - +

[4] MOTION OF POSITRONS IN METALS [J]. APPLIED PHYSICS, 1974, 4 (01): : 25 - 35

[5] THE ELECTRONIC STRUCTURE OF V-CENTERS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 3 (3-4) : 178 - 195

[6] POSITRON ANNIHILATION AND DEFECTS IN METALS [J]. PHYSICS LETTERS A, 1969, A 30 (01) : 24 - &

[7] TEMPERATURE-DEPENDENCE OF POSITION TRAPPING RATE AT LATTICE VACANCIES [J]. PHYSICS LETTERS A, 1973, A 43 (04) : 395 - 396

[8] Doyama M., 1973, Crystal Lattice Defects, V4, P139

[9] SLOW ELECTRONS IN A POLAR CRYSTAL [J]. PHYSICAL REVIEW, 1955, 97 (03): : 660 - 665

[10] THEORETICAL FOUNDATION AND EXTENSION OF TRAPPING MODEL [J]. APPLIED PHYSICS, 1974, 3 (01): : 61 - 66