ARF LASER PHOTOLYSIS OF OCSE .1. SE(1S) QUENCHING PROCESSES

Quenching rates for Se(1S) and Se2 by OCSe have been measured using ArF laser photolysis of OCSe at 193 nm for the generation of Se(1S) atoms and the reactive mechanism Se(1S) + OCSe→Se2 + CO as the source of Se2. The experimentally determined quenching rates are (1.6±0.4)X 10-10 and 4.6x10-11cm3 molecule-1 sec-1 for the processes OCSe + Se(1S) and OCSe + Se2, respectively. Evidence is presented which demonstrates that the Se2 is formed initially in a state other than the strongly radiating B 3Σu- level. © 1979 American Institute of Physics.