AN INVESTIGATION ON THE SHORT-CHANNEL EFFECT FOR O.1-MU-M FULLY DEPLETED SOIMOSFET USING EQUIVALENT ONE-DIMENSIONAL MODEL

被引：1

作者：

KOH, R

KATO, H

机构：

[1] Microelectronics Reserch Laboratory NEC Corp, Sagamihara, Kanagawa, 229, 1120, Shimokuzawa

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

SOI; MOSFET; SHOT CHANNEL EFFECT; S FACTOR; ANALYTICAL MODEL;

D O I：

10.1143/JJAP.34.836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An analytical model for the short channel effect for the silicon on insulator metal oxide semiconductor field effect transistor (SOIMOSFET) is proposed. The two dimensional potential problem is reduced to a one dimensional problem, using a virtual electrode which is equivalent to the drain and the source electrodes. The behavior for the short channel effect is also discussed using this model.

引用

页码：836 / 841

页数：6