ELECTROCHEMISTRY OF NORMAL-TYPE CDS, GAP, AND GAAS AND PARA-TYPE GE SEMICONDUCTOR ELECTRODES IN N,N-DIMETHYLFORMAMIDE SOLUTIONS

被引：24

作者：

YEH, LSR

HACKERMAN, N

机构：

[1] RICE UNIV,DEPT CHEM,HOUSTON,TX 77001

[2] ALLIED CHEM CORP,MORRISTOWN,NJ 07960

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1978年 / 82卷 / 25期

关键词：

D O I：

10.1021/j100514a019

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：2719 / 2726

页数：8

共 41 条

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