INTERBAND TRANSITION RATE IN GAAS

被引：20

作者：

STOBBE, M ^{[1
]}

KONIES, A ^{[1
]}

REDMER, R ^{[1
]}

HENK, J ^{[1
]}

SCHATTKE, W ^{[1
]}

机构：

[1] UNIV KIEL,INST THEORET PHYS,W-2300 KIEL 1,GERMANY

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.44.11105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Starting from a quantum-kinetic Boltzmann equation, the scattering rate for interband transition processes in GaAs is calculated numerically, taking into account a realistic band structure with corresponding Bloch wave functions. We compare with approximate solutions for this scattering rate such as the Keldysh or the Bethe formula, which are frequently used in simulations for high-field electron transport in solids. Based on the parameter-free numerical results, a fit formula for the impact ionization rate in GaAs is derived.

引用

收藏

页码：11105 / 11110

页数：6

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