CONDITIONS AT A P-N JUNCTION IN THE PRESENCE OF COLLECTED CURRENT

被引：24

作者：

MIDDLEBROOK, RD

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(63)90052-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：555 / 571

页数：17

共 8 条

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[4] MATZ AW, 1959, JEC, V7, P133
[5] EFFECTS OF MODIFIED COLLECTOR BOUNDARY CONDITIONS ON THE BASIC PROPERTIES OF A TRANSISTOR
MIDDLEBROOK, RD
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (06) : 573 - 588
[6] SPACE-CHARGE LIMITED EMISSION IN SEMICONDUCTORS
SHOCKLEY, W
PRIM, RC
[J]. PHYSICAL REVIEW, 1953, 90 (05): : 753 - 758
[7] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
[8] SPARKES JJ, COMMUNICATION